Crystalline Silicon/Perovskite PL/EL Integrated Tester
SC-PLEL-PS
Product introduction
Crystalline Silicon/Perovskite PLEL All-in-One System SC-PLEL-PS
Integrated EL and PL dual-mode luminescence inspection, covering crystalline silicon/perovskite/tandem cells, from R&D to mass production throughout the entire lifecycle.
China's First Dual-Mode All-in-One System
Crystalline Silicon/Perovskite PLEL All-in-One System is an innovative inspection device independently developed by Vision Potential. It integrates EL and PL dual-mode luminescence imaging capabilities, enabling synchronous benchmarking analysis of the same detection area and fully presenting the morphology and distribution of various defects. The device is equipped with a highly stable semiconductor laser light source (main wavelength 808±5nm, optional multi-band), paired with a high-sensitivity NIR camera, achieving high-resolution imaging of ≥0.1mm/pixel.
Covers crystalline silicon cells (PERC/TOPCon/HJT/xBC), single-junction perovskite cells, and tandem cells, supporting raw material control, process monitoring, finished product grading, and R&D innovation, providing quantitative data support for photovoltaic technology iteration.
SC-PLEL-PS Device Diagram1000×900×1600mm | Approx. 200kg
Applications
Crystalline Silicon PERC/TOPCon/HJT/xBC
Single-Junction/Flexible Perovskite
Crystalline Silicon-Perovskite Tandem
01
Raw Material Quality Control
Analyze crystal structure and impurity distribution via PL, eliminate defects at the source, and reduce rework costs.
02
Full-Process Process Monitoring
Capture defects caused by process fluctuations, provide quantitative data to support parameter adjustments, and ensure stable product quality.
03
Finished Product Inspection & Grading
Comprehensively inspect defects and evaluate performance, achieve product grading, ensure compliance with industry standards, and avoid downstream application risks.
04
R&D Innovation Support
Provide quantitative data for high-efficiency cell technology iteration and defect mechanism research, accelerating new technology industrialization.
Functions
Functional Advantages
A1
Dual-Mode Imaging · Synchronous Analysis
EL locks onto current blocking areas caused by cracks; PL identifies non-radiative recombination centers at grain boundaries, fully presenting defect morphology and distribution.
A2
Automated Control
Intelligent control of cylinders/motors for automatic transport, position calibration, and lifting, significantly enhancing inspection efficiency and result repeatability.
A3
Multi-Wavelength Light Source
808±5nm standard, optional 450/915/980nm; spot uniformity ≥90%, power adjustable 0.1~2 suns, precisely matching various cell excitation requirements.
A4
High-Resolution Imaging
NIR-enhanced camera, max frame rate 4.5FPS, imaging accuracy ≥0.1mm/pixel, capturing subtle defects.
A5
Quantitative Parameter Analysis
Proprietary algorithms analyze minority carrier diffusion length, lifetime (accuracy ±0.1μs, τ≤10μs), outputting IVoc, Jo, τ, Rs Mapping.
A6
High-Precision Programmable Power Supply
Constant current/voltage dual modes, voltage 030V (±1%), current 010A (±1%), precisely meeting different cell bias requirements.
Inspection Efficiency: ≤15 seconds per piece, suitable for full-process quality control in industrial mass production, quickly screening unqualified products and reducing subsequent packaging costs.
Auxiliary Functions · Intelligent Analysis Software
· Image Processing: Multiple adjustment methods and format saving
· Data Management: Automatic report generation and traceability
· Precise Observation: Cursor tracking and local statistics
· Intelligent Analysis: Automatic defect classification, MES interface
· Generate Mapping Graphs: IVoc, Jo, τ, Rs, etc.
· From Qualitative to Quantitative: Intuitive performance distribution display
· Suns-Voc Analysis, recombination study
Core Technical Parameters
Parameter Specification Model SC-PLEL-PS Camera Specifications NIR enhanced, 25MP, exposure 10μs~30s, response 400-1200nm Infrared Pixels 500~2500万像素 Lens Specifications HD wide-angle 8/16/25mm optional, FOV ≥80° Light Source Specifications Semiconductor laser, main wavelength 808±5nm (optional 450/915/980nm) Spot Uniformity ≥90% (within effective detection area) Detection Cycle 12μs~10000ms, step 1ms adjustable Detection Wavelength Range 9001300nm (Crystalline Si), 700900nm (Perovskite) Detectable Defect Types Cracks, broken grid, fragments, scratches, cold solder, over-etching, black spots, concentric circles, low-efficiency cells, contamination, etc. Probe Configuration 2~6 sets of pins, adjustable pitch, pure copper gold-plated (customizable) Stage Size 50×50mm ~ 230×230mm (larger customizable) Control Method Proprietary software fully automated control Detection Accuracy Crack width > 50μm detectable Imaging Accuracy ≥0.1mm/pixel Focus Mode / Distance Manual focus / 130-650mm Hardware Mount Aluminum profile, sheet metal, etc. Inspection Time 0.1s~10s (automatic based on object) Test Platform Windows platform Constant Current/Voltage 010A adjustable, accuracy ±1% / 030V adjustable, accuracy ±1% Power 1000-2000W Power Supply Protection Reverse current, overload, leakage, ESD, overheat protection Computing Device Industrial computer Inspection Objects Crystalline Si cells, single-junction Perovskite cells, Crystalline Si-Perovskite tandem cells (bare, with film, packaged) Ambient Temperature 15-50℃, Humidity 30%-70% (non-condensing) Equipment Weight Approx. 200kg (actual product prevails) Dimensions 1000×900×1600mm (L×W×H, actual product prevails) Power Supply Single-phase AC220V±10%, 50HZ±1HZ Application Cases · Multi-Material Imaging Comparison
Inspection Type Inspection Object B&W Imaging False Color Imaging Imaging Analysis PL (Photoluminescence) Crystalline Silicon Cell PL-image-01 PL-image-02 Evaluate crystal quality and carrier lifetime via PL signal intensity: bright areas indicate good crystallization and long lifetime, dark lines/areas indicate cracks, metal impurities, etc. Perovskite Cell PL-image-03 PL-image-04 Analyze film uniformity and defect state density: dark spots correspond to defect-rich areas or interface recombination centers. Perovskite Tandem - Perovskite Layer PL-image-05 PL-image-06 Focus on intrinsic properties and interface matching of the perovskite layer; abnormal luminescence decay indicates high interface state density. Perovskite Tandem - Crystalline Si Layer PL-image-07 PL-image-08 Targeted detection of cracks, contamination in the crystalline Si layer, quantify carrier lifetime, assess tandem structure impact. EL (Electroluminescence) Crystalline Silicon Cell EL-image-01 EL-image-02 Identify electrode contact abnormalities and carrier transport; dark areas may indicate cracks or broken grid. Perovskite Cell EL-image-03 EL-image-04 Identify defect types and current distribution uniformity; dark spots indicate scribing deviations, cracks, or bad cells. Perovskite Tandem - Perovskite Layer EL-image-05 EL-image-06 Evaluate interlayer compatibility and current matching; abnormal luminescence indicates carrier injection/extraction obstacles. Perovskite Tandem - Crystalline Si Layer EL-image-07 EL-image-08 Analyze crystalline Si layer electrode contact and overall synergy, avoid local current crowding leading to efficiency loss. Core Inspection Capabilities
Detects minority carrier diffusion length, minority carrier lifetime (accuracy ±0.1μs), micro-cracks/broken grid/black spots/concentric circles and other defects.
Supports IVoc, Jo, τ, Rs Mapping quantitative analysis, automatic report generation and traceability.
Gold-plated probe design, 2~6 sets adjustable, adaptable to different grid line spacings.
Non-contact, non-destructive inspection, suitable for both laboratory R&D and mass production quality control.
Crystalline Si · Perovskite · Tandem Full Scenario Coverage
University Research · Corporate R&D · Production Line QC · Finished Product Grading
Dual-Mode Imaging · Synchronous Analysis Quantitative Mapping · Full Defect Recognition
Applications
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