Microcrack testing module

SC-MC-W

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  • Product introduction

  • Crack Detection Equipment SC-MC-W

    Designed specifically for defect inspection of silicon wafers and cells in the photovoltaic industry, integrating multiple solutions such as TFC, NIR infrared + AI intelligent algorithms.

    Flexible Multi-Solution Switching · Full-Cycle Defect Coverage

    Crack Detection Equipment SC-MC-W is a high-precision automated inspection device specially developed by Vision Potential for defect detection of silicon wafers and cells in the photovoltaic industry. It innovatively integrates diverse inspection technologies such as TFC solution, TFC+visible light solution, TFC+backlight crack solution, bright-field backlight crack solution, dark-field backlight crack solution, combining NIR infrared imaging technology with AI intelligent algorithms to achieve full-cycle defect coverage from silicon material slicing to cell manufacturing processes. Multiple solutions can be switched on demand, adapting to multi-technology route cell products and different inspection scenarios, balancing production efficiency and inspection accuracy.

    Crack Detection ModuleSC-MC-W Device Diagram

    350×250×600mm | Approx. 20kg

    Applications

    01

    Silicon Material Slicing Manufacturing

    Outgoing quality inspection and in-process inspection for mono/polycrystalline silicon wafers and quasi-mono slices after ingot cutting, accurately identifying defects such as cracks, broken pieces, silicon dropout, edge chipping, ensuring incoming material quality.

    02

    Cell Manufacturing · Incoming Inspection

    Incoming quality inspection for purchased silicon wafers and semi-finished cells, preventing unqualified materials from entering the production process and stabilizing production line operation.

    03

    Cell Manufacturing · In-Process Inspection

    Covers the entire process including texturing, diffusion, coating, etching, metallization, etc., adopting dark-field inspection solutions to effectively avoid issues like unclear imaging and interference common in traditional methods, real-time monitoring of process damage.

    04

    University/Laboratory Research & Testing

    Supports customizable inspection parameters and flexible switching between multiple solutions, providing high-precision imaging data for research on PV material defect mechanisms and new algorithm validation.

    Functions

    A

    Module Structure

    Composed of four parts: camera module, light source module, machined structural parts, and computing module, ensuring stability and reliability.

    B

    Full Size Compatibility

    Supports 156×156mm~210×210mm (half/full wafers) without changing adapter components.

    C

    High-Speed Batch Inspection

    Throughput ≥6000 pieces/hour, inspection time 0.25~0.5s, matching production line rhythm.

    D

    Core Defect Recognition

    Accurate detection of typical defects such as cracks, edge chipping, corner breaks, fragments, silicon dropout.

    E

    Flexible Solution Switching

    One-click switching between bright-field/dark-field crack solutions and TFC series solutions, adapting to different materials/thicknesses.

    F

    Multi-Technology Route Compatibility

    Compatible with mainstream and emerging cell technologies such as PERC/TOPCon/HJT/xBC.

    G

    Automation Integration

    Online/offline machines seamlessly integrate with production lines, realizing fully automated inspection, sorting, and alarming processes.

    H

    Defect Traceability

    AI algorithm automatically records defect location/type/size, generates inspection data for process traceability.

    I

    High-Precision Data Output

    Imaging accuracy ≥0.1mm/pixel, multiple solutions capture minute defect details.

    J

    Flexible Parameter Adjustment

    Core parameters such as exposure time, defect size/length/grayscale support manual customization.

    K

    Multi-Dimensional Analysis Support

    Imaging data can be exported, compatible with third-party analysis software, meeting production statistics or academic research needs.

    Technical Advantages

    Solution Adaptability · Full Scene Coverage

    • Multi-solution fast switching: one-click switch between bright-field/dark-field crack solutions and TFC series solutions, no extra debugging required
    • Solves the pain point of uneven imaging caused by diverse incoming material line directions in traditional equipment
    • Multi-technology route compatibility: PERC/TOPCon/HJT/xBC, poly/mono/quasi-mono wafers, and pre/post coating processes
    • Seamless full-process integration: dedicated solutions for incoming, texturing, coating, diffusion, etching, metallization, etc.

    Inspection Efficiency · Intelligent & Efficient

    • High-speed batch inspection: throughput ≥6000 pieces/hour, inspection time 0.25~0.5s
    • Full core defect coverage: cracks, edge chipping, corner breaks, fragments, silicon dropout, notches, scratches, no omission
    • Automated integration and traceability: seamless connection with production lines, AI automatically records defect location/type/size, generates inspection reports

    Precision Accuracy · High-Definition Imaging

    • Ultra-high imaging accuracy: 1k/4k resolution cameras, ≥0.1mm/pixel, 900~1700nm wavelength dedicated for crystalline silicon
    • Accurate defect detection: 50μm crack width recognition, effectively avoiding false detections caused by process fluctuations and surface contamination

    Software & Hardware Support · Stable Adaptation

    • Flexible hardware compatibility: full size coverage 156~210mm, custom stage, durable materials
    • Adjustable software parameters: manual customization of exposure time (10μs~1s), wavelength, focus distance (400-650mm)
    • Convenient data interaction: imaging data exportable, compatible with third-party software, standard Windows AI inspection software

    Technical Specifications

    Parameter Specification
    Model SC-MC-W
    Camera Specifications NIR enhanced InGaAs camera / 4K line scan CMOS, 1k/4k pixels, exposure 10μs~10s, response 900-1700nm
    Infrared Pixels 1024*1 pixels / 4096*2 pixels
    Lens Specifications HD wide-angle 16/25/45mm optional, FOV ≥80°, telephoto lens optional
    Light Source Specifications Semiconductor laser, wavelength 1100±5nm / 1300±5nm / 1450±5nm
    Spot Uniformity ≥90% (within effective detection area)
    Exposure Cycle 20μs~10000μs, step 1ms adjustable
    Detection Wavelength Range 900~1700nm (for crystalline silicon)
    Compatible Sizes 156×156mm ~ 210×210mm (half/full wafers)
    Wafer Thickness 160~200μm
    Inspection Objects Crystalline silicon cells (PERC/TOPCon/HJT/xBC); pre-coating / pre-process cells
    Detectable Defect Types Cracks, edge chipping, silicon dropout, notches, corner breaks, fragments, scratches, etc.
    Stage Size Adaptable to automated tracks (customizable)
    Control Method Proprietary host software fully automated control
    Detection Accuracy Crack width > 50μm detectable
    Imaging Accuracy ≥0.1mm/pixel
    Focus Mode / Distance Manual focus / 400-650mm
    Hardware Mount Aluminum profile, sheet metal, etc.
    Inspection Time 0.25s~2s (based on automation cycle)
    Test Platform Windows + standard AI inspection software
    Power 500-1000W
    Power Supply Protection Reverse current/overload/leakage/ESD/overheat protection
    Computing Device Industrial computer
    Ambient Temperature 15-50℃, Humidity 30%-70% (non-condensing)
    Equipment Weight Approx. 20kg (actual product prevails)
    Dimensions 350×250×600mm (L×W×H)
    Power Supply Single-phase AC220V±10%, 50HZ±1HZ

    Application Examples

    Poly TFC Crack

    Poly TFC Crack

    Poly TFC Crack Detail

    Poly TFC Crack Detail

    Mono TFC Crack Detail

    Mono TFC Crack Detail

    Mono Wafer TFC Crack

    Mono Wafer TFC Crack

    Poly Wafer TFC Crack

    Poly Wafer TFC Crack

    Bright Field Crack 1

    Bright Field Crack

    Bright Field Crack 2

    Bright Field Crack

    Bright Field Si Dropout

    Bright Field Si Dropout

    Bright Field Notch + Crack

    Bright Field Notch + Crack

    Bright Field Edge Chipping

    Bright Field Edge Chipping

    Dark Field Si Dropout

    Dark Field Si Dropout

    Dark Field Perforation

    Dark Field Perforation

    Dark Field Crack

    Dark Field Crack

    Dark Field Si Dropout

    Dark Field Si Dropout

    Dark Field Edge Chipping

    Dark Field Edge Chipping

    Core Positioning

    A high-precision automated inspection device specially developed for defect detection of silicon wafers and cells in the photovoltaic industry. It innovatively integrates diverse inspection technologies such as TFC solution, TFC+visible light solution, TFC+backlight crack solution, bright-field backlight crack solution, dark-field backlight crack solution, combining NIR infrared imaging technology with AI intelligent algorithms to achieve full-cycle defect coverage from silicon material slicing to cell manufacturing processes. Multiple solutions can be switched on demand, adapting to multi-technology route cell products and different inspection scenarios, balancing production efficiency and inspection accuracy, providing users with flexible and efficient customized inspection solutions.

    Silicon Wafers · Cells · Full-Process Crack Control

    Flexible Multi-Solution Switching · NIR+AI Precision Recognition · Throughput ≥6000 pcs/hr

    TFC/Bright Field/Dark Field SwitchableCracks/Edge Chipping/Si Dropout Full Coverage

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